产品参数
标准包装:5,000
FET 型:MOSFET N-Channel, Metal Oxide
FET特点:Logic Level Gate
漏极至源极电压(VDSS):30V
电流-连续漏极(编号)@ 25°C:21A
Rds(*大)@ ID,VGS:4 mOhm @ 20A, 10V
VGS(TH)(*大)@ Id :2.2V @ 250µA
栅极电荷(Qg)@ VGS: 45nC @ 10V
输入电容(Ciss)@ Vds:1540pF @ 15V
功率 - *大: 3.1W
安装类型: Surface Mount
包/盒:8-SMD
供应商器件封装:8-DFN-EP (3x3)
包装材料:Tape & Reel (TR)
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