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CGH35240
240-W, 3100 – 3500-MHz, 50-ohm Input/Output-Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35240F ideal for 3.1 – 3.5-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Features:
3.1 - 3.5 GHz Operation
240 W Typical Output Power
11.6 dB Power Gain at PIN = 42.0 dBm
57 % Typical Power Added Efficiency
50 Ohm Internally Matched
<0.2 dB Pulsed Amplitude Droop |
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