CGHV96100F2
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier
Cree’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
CREE现有库存器件
型号 数量 单价
CGHV96100F2 14 14580
CMPA2735075F 20 7950
CGH35240F 10 13500
CGHV35400F 10 14500
CGH40010F 30 1250
CGHV96050F2 10 8250
CMPA0060025F 10 7550
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